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Nishi and R. Doering Eds. Diebold and W. Huff and D. Gilmer, Springer-Verlag, Heidelberg, pp — Metrology Challenges for nm and Beyond, A. Overview of Metrology for On-chip Interconnect, A. Diebold, ed. Status of Lithography Metrology at the end of , A. Silicon Semiconductor Metrology, A. Diebold, W. Chism, T.

Advanced interconnects for ULSI technology

Dziura, and A. Diebold and R. Electron microscopy based measurement of feature thickness and calibration of reference materials, Handbook of Silicon Semiconductor Metrology, A. In-Line Metrology, A. Diebold and N. Metrology Tools for Semiconductor Manufacturing, A. Optical Properties of Nanoscale Materials, A. Diebold and C. Berlin, Germany. Advances in Graphene Metrology, A. Diebold, T. Zhang, and F. Price, P. Hung, T. Rhoad, B.

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Foran, and A. Diebold, Appl. Diebold, B. Foran, C. Kisielowski, D. Muller, S. Pennycook, E. Principe, and S. Stemmer, Microsc. Abstract Characterization and production metrology of thin transistor gate oxide films, A. Diebold, D. Venables, Y. Chabal, D. Muller, M.

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Newbury, K-S Woo, B. Liu, A. Diebold, and J. Seiler, A. Diebold, M. Bullis, T. Shaffner, R. McDonald, and E. Walters Eds. Comparison of the submicron particle analysis capabilities of Auger Electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with one micron thick oxide layers, A.

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